Title :
30 nm In0.7Ga0.3As Inverted-Type HEMTs with reduced gate leakage current for logic applications
Author :
Tae-Woo Kim ; Kim, Dae-Hyun ; del Alamo, Jesus A.
Author_Institution :
Massachusetts Inst. of Technol. (MIT), Cambridge, MA, USA
Abstract :
We have fabricated 30 nm In0.7Ga0.3As Inverted-Type HEMTs with outstanding logic performance, scalability and high frequency characteristics. The motivation for this work is the demonstration of reduced gate leakage current in the Inverted HEMT structure. The fabricated devices show excellent Lg scalability down to 30 nm. Lg = 30 nm devices have been fabricated with exhibit gm = 1.27 mS/¿m, S = 83 mV/dec, DIBL = 118 mV/V, ION/IOFF = 4 × 104, all at 0.5 V. More significantly, the removal of dopants from the barrier suppresses forward gate leakage current by over 100X when compared with equivalent normal HEMTs. The Lg = 30 nm devices also feature record high-frequency characteristics for an inverted-type HEMT design with fT = 500 GHz and fmax = 550 GHz.
Keywords :
high electron mobility transistors; logic gates; In0.7Ga0.3As; dopants; forward gate leakage current; frequency 500 GHz; frequency 550 GHz; high electron mobility transistors; high frequency characteristics; inverted HEMT structure; inverted type HEMT; logic applications; logic performance; reduced gate leakage current; scalability; size 30 nm; voltage 0.5 V; HEMTs; III-V semiconductor materials; Indium compounds; Indium gallium arsenide; Leakage current; Logic devices; MODFETs; Physics; Pulse inverters; Scalability;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424317
