• DocumentCode
    1651758
  • Title

    Universality of power-law voltage dependence for TDDB lifetime in thin gate oxide PMOSFETs

  • Author

    Ohgata, K. ; Ogasawara, M. ; Shiga, K. ; Tsujikawa, S. ; Murakami, E. ; Kato, H. ; Umeda, H. ; Kubota, K.

  • Author_Institution
    SProcess & Device Anal. Eng. Dev. Dept., Renesas Technol. Corp., Ibaraki, Japan
  • fYear
    2005
  • Firstpage
    372
  • Lastpage
    376
  • Keywords
    MOSFET; electric potential; life testing; semiconductor device breakdown; semiconductor device reliability; TDDB lifetime; accumulation mode; cathode side hydrogen release model; inversion mode; n-FET; oxide reliability; p-FET; power-law voltage dependence; thin gate oxide PMOSFET; time-dependent dielectric breakdown; voltage acceleration exponents; Breakdown voltage; CMOS technology; Leakage current; Low voltage; MOSFETs; Plasma applications; Plasma measurements; Semiconductor device modeling; Stress; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493115
  • Filename
    1493115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651758