• DocumentCode
    1651780
  • Title

    MVHR (multi-vibrational hydrogen release): consistency with bias temperature instability and dielectrics breakdown

  • Author

    Ribes, G. ; Bruyere, S. ; Denais, M. ; Roy, D. ; Ghibaudo, G.

  • Author_Institution
    Central R&D Labs, STMicroelectron., Crolles, France
  • fYear
    2005
  • Firstpage
    377
  • Lastpage
    380
  • Keywords
    MIS devices; dielectric thin films; hot carriers; hydrogen; interface states; semiconductor device breakdown; thermal stability; BTI stress; H; MOS devices; MVHR; SHE; SHH; bias temperature instability; dielectric breakdown; gate oxide breakdown; interface states generation; multivibrational hydrogen release; oxide bulk defect generation; substrate hot electron stress; substrate hot hole stress; Bonding; Charge carrier processes; Dielectric breakdown; Electric breakdown; Hydrogen; Interface states; MOSFETs; Stress; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493116
  • Filename
    1493116
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651780