1651780

MVHR (multi-vibrational hydrogen release): consistency with bias temperature instability and dielectrics breakdown

Ribes, G. ; Bruyere, S. ; Denais, M. ; Roy, D. ; Ghibaudo, G.

Central R&D Labs, STMicroelectron., Crolles, France

2005

377

380

MIS devices; dielectric thin films; hot carriers; hydrogen; interface states; semiconductor device breakdown; thermal stability; BTI stress; H; MOS devices; MVHR; SHE; SHH; bias temperature instability; dielectric breakdown; gate oxide breakdown; interface states generation; multivibrational hydrogen release; oxide bulk defect generation; substrate hot electron stress; substrate hot hole stress; Bonding; Charge carrier processes; Dielectric breakdown; Electric breakdown; Hydrogen; Interface states; MOSFETs; Stress; Temperature; Voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493116

1493116