Title :
Mathematical models and dynamic characteristics for pulsed IMPATT diode
Author :
Zemliak, Alexander ; Khotiaintsev, Sergei ; Romero, Lsidro ; Celaya, Carlos
Author_Institution :
Fac. of Phys. & Math., Puebla Autonomous Univ., Mexico
Abstract :
Mathematical models for the analysis of high-power pulsed IMPATT-diode microwave oscillators are presented. These models take into account charge diffusion, impact ionization, carrier drift velocity changes as well as an exact temperature distribution along the active layer. The temperature distribution is of great importance for the computation of dynamic admittance characteristics. New type of IMPATT diode is proposed that has an improved generated frequency and power stability
Keywords :
IMPATT oscillators; impact ionisation; microwave oscillators; power semiconductor diodes; semiconductor device models; carrier drift velocity; charge diffusion; dynamic admittance; frequency generation; high-power pulsed IMPATT diode; impact ionization; mathematical model; microwave oscillator; power stability; temperature distribution; Admittance; Diodes; Distributed computing; Electron mobility; Frequency; Impact ionization; Mathematical model; Microwave oscillators; Power generation; Temperature distribution;
Conference_Titel :
Devices, Circuits and Systems, 1995., Proceedings of the 1995 First IEEE International Caracas Conference on
Conference_Location :
Caracas
Print_ISBN :
0-7803-2672-5
DOI :
10.1109/ICCDCS.1995.499119
