Mathematical models and dynamic characteristics for pulsed IMPATT diode

Author

Zemliak, Alexander ; Khotiaintsev, Sergei ; Romero, Lsidro ; Celaya, Carlos

Author_Institution

Fac. of Phys. & Math., Puebla Autonomous Univ., Mexico

fYear

1995

Firstpage

66

Lastpage

69

Abstract

Mathematical models for the analysis of high-power pulsed IMPATT-diode microwave oscillators are presented. These models take into account charge diffusion, impact ionization, carrier drift velocity changes as well as an exact temperature distribution along the active layer. The temperature distribution is of great importance for the computation of dynamic admittance characteristics. New type of IMPATT diode is proposed that has an improved generated frequency and power stability

Keywords

IMPATT oscillators; impact ionisation; microwave oscillators; power semiconductor diodes; semiconductor device models; carrier drift velocity; charge diffusion; dynamic admittance; frequency generation; high-power pulsed IMPATT diode; impact ionization; mathematical model; microwave oscillator; power stability; temperature distribution; Admittance; Diodes; Distributed computing; Electron mobility; Frequency; Impact ionization; Mathematical model; Microwave oscillators; Power generation; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 1995., Proceedings of the 1995 First IEEE International Caracas Conference on

Conference_Location

Caracas

Print_ISBN

0-7803-2672-5

Type

conf

DOI

10.1109/ICCDCS.1995.499119

Filename

499119