Title :
Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport
Author :
Saitoh, Masumi ; Yasutake, Nobuaki ; Nakabayashi, Yukio ; Uchida, Ken ; Numata, Toshinori
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and Idsat increase by strain is determined not only by low-field mobility (¿) enhancement (¿¿/¿) but also by the modulation of saturation velocity (vsat). It is found that vsat increases more by strain in smaller-¿¿/¿ devices. The difference of ¿¿/¿ is compensated by vsat change. As a result, ¿v/v of (100)/(110) n/pFETs converge in sub-30 nm regime. The superiority of (110) CMOS to (100) CMOS is maintained in terms of both Idlin and Idsat at highly-strained conditions.
Keywords :
CMOS integrated circuits; CMOSFET; high-field carrier velocity; low-field mobility enhancement; saturation velocity modulation; short-channel nFET; short-channel pFET; size 30 nm; strain effects; CMOS technology; CMOSFETs; Capacitive sensors; Large scale integration; Mechanical variables measurement; Research and development; Scattering; Strain measurement; Stress measurement; Velocity measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424318
