• DocumentCode
    1651810
  • Title

    Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification

  • Author

    Kaczer, B. ; Arkhipov, V. ; Degraeve, R. ; Collaert, N. ; Groeseneken, G. ; Goodwin, M.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2005
  • Firstpage
    381
  • Lastpage
    387
  • Keywords
    amorphous state; dielectric materials; field effect transistors; recovery; semiconductor device models; temperature; thermal stability; amorphous dielectrics; disorder-controlled diffusion; disorder-controlled-kinetics model; drift; electric field dependency; finFET; multiple-gate pFET; negative bias temperature instability; nonArrhenius behavior; Acceleration; Dispersion; Hydrogen; Negative bias temperature instability; Niobium compounds; Predictive models; Stress; Temperature dependence; Threshold voltage; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493117
  • Filename
    1493117
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651810