Title :
Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification
Author :
Kaczer, B. ; Arkhipov, V. ; Degraeve, R. ; Collaert, N. ; Groeseneken, G. ; Goodwin, M.
Author_Institution :
IMEC, Leuven, Belgium
Keywords :
amorphous state; dielectric materials; field effect transistors; recovery; semiconductor device models; temperature; thermal stability; amorphous dielectrics; disorder-controlled diffusion; disorder-controlled-kinetics model; drift; electric field dependency; finFET; multiple-gate pFET; negative bias temperature instability; nonArrhenius behavior; Acceleration; Dispersion; Hydrogen; Negative bias temperature instability; Niobium compounds; Predictive models; Stress; Temperature dependence; Threshold voltage; Titanium compounds;
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
DOI :
10.1109/RELPHY.2005.1493117
