1651825

Change of acceleration behavior of time-dependent dielectric breakdown by the beol process: indications for hydrogen induced transition in dominant degradation mechanism

Pompl, T. ; Allers, K.-H. ; Schwab, R. ; Hofmann, K. ; Roehner, M.

Infineon Technol., Munich, Germany

2005

388

397

MIS structures; electric breakdown; hydrogen; silicon compounds; temperature; thermal stability; H₂; MOS technologies; SiO₂; back end of line process; continuous hydrogen reaction model; degradation mechanism; hydrogen induced transition; negative bias temperature instability tests; silicon dioxide based gate dielectrics; time-dependent dielectric breakdown; Acceleration; Breakdown voltage; Degradation; Dielectric breakdown; Electric breakdown; Hydrogen; Niobium compounds; Semiconductor process modeling; Testing; Titanium compounds;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493118

1493118