Title :
Germanium for advanced CMOS anno 2009: a SWOT analysis
Author :
Caymax, M. ; Eneman, G. ; Bellenger, F. ; Merckling, C. ; Delabie, A. ; Wang, G. ; Loo, R. ; Simoen, E. ; Mitard, J. ; De Jaeger, B. ; Hellings, G. ; De Meyer, K. ; Meuris, M. ; Heyns, M.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Germanium has emerged as an exciting alternative material for high-performance scaled CMOS, however not without difficulties. After a review of the state-of-the-art, mainly focusing on two techniques to passivate the channel/dielectric interface, we analyze the strengths (carrier mobility, band gap), and weaknesses (n-type doping, lattice mismatch and BTBT leakage) of Ge for MOSFETs. We also identify some opportunities and the most important threats for the future of germanium.
Keywords :
CMOS integrated circuits; germanium; Ge; MOSFET; SWOT analysis; carrier mobility; channel-dielectric interface; high-performance scaled CMOS; Dielectric materials; Electron mobility; Germanium; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFETs; Oxidation; Passivation; Photonic band gap;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424320
