1651896

Reliability considerations of strained silicon on relaxed silicon-germanium (SiGe) substrate

Shih, J.R. ; Wu, Kenneth

Reliability Assurance Div., Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

2005

403

408

Ge-Si alloys; MOSFET; dislocations; interface states; semiconductor device reliability; silicon; stress effects; substrates; thermal stresses; I-V characteristics degradation; MOSFET; Si-SiGe; SiGe; high temperature; nMOSFET; negative bias temperature stress; pMOSFET; relaxed silicon-germanium substrate; reliability degradation; strain-induced misfit dislocations; strained silicon; substrate-induced donor-type interface state generation; Degradation; Electron mobility; Germanium silicon alloys; Human computer interaction; Interface states; MOSFETs; Semiconductor device reliability; Silicon germanium; Substrates; Temperature distribution;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493120

1493120