Title :
Correlation between low-field mobility and high-field carrier velocity in quasi-ballistic-transport MISFETS scaled down to Lg=30 nm
Author :
Tatsumura, Kosuke ; Goto, Masakazu ; Kawanaka, Shigeru ; Kinoshita, Atsuhiro
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
Mobility (¿) and Lg dependence of high-field velocity (v) is systematically investigated. A wide variety of ¿ characteristics are realized with various gate dielectrics of SiO2, SiON, HfLaSiON, and HfLaAlSiON. At Lg = 30 nm, the sensitivities of v to ¿ and scaling in Lg, (¿v/v)/(¿¿/¿) and (¿v/v)/(¿Lg/Lg), are 0.43 and -0.45, respectively: in quasi-ballistic transport regime, ¿ and scaling in Lg still play an important role on Ion improvement with v enhancement. High-k MISFETs do not show any particular v degradation in high-energy carrier transport. ¿-Tinv characteristics of MG/high-k gate-stacks required for 22 nm-node and beyond is discussed based on the experimental data for ¿ and Lg dependence of v.
Keywords :
MISFET; ballistic transport; carrier mobility; dielectric materials; high-k dielectric thin films; HfLaAlSiON; HfLaSiON; MG/high-k gate-stacks; SiO2; SiON; gate dielectrics; high-energy carrier transport; high-field carrier velocity; high-k MISFET; low-field mobility; quasi-ballistic transport regime; quasi-ballistic-transport MISFET; Degradation; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; Laboratories; Large scale integration; MISFETs; Optical scattering; Phonons; Research and development;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424321
