• DocumentCode
    1651934
  • Title

    Record-high electron mobility in Ge n-MOSFETs exceeding Si universality

  • Author

    Lee, C.H. ; Nishimura, T. ; Saido, N. ; Nagashio, K. ; Kita, K. ; Toriumi, A.

  • Author_Institution
    Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We have demonstrated very high electron mobility in Ge n-MOSFETs which exceeds the universal one in Si-MOSFETs. The peak electron mobility on Ge n-MOSFETs is about 1100 cm2/Vsec in Al/GeO2/Ge stack. This has been achieved by taking care of Ge/GeO2 channel interface based on thermodynamic and kinetic control. Since it is clarified that the mobility is still limited by remaining scattering sources, the present results promise us to expect much higher performance Ge CMOS.
  • Keywords
    MOSFET; electron mobility; elemental semiconductors; germanium compounds; silicon; Al-GeO2-Ge; Ge; Ge n-MOSFET; Ge-GeO2; Si universality; Si-MOSFET; high electron mobility; kinetic control; thermodynamic control; Annealing; Capacitance-voltage characteristics; Degradation; Electron mobility; FETs; Fabrication; Hysteresis; MOSFET circuits; Temperature; Thermodynamics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424323
  • Filename
    5424323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651934