1651936

Reliability issues associated with operating voltage constraints in advanced SiGe HBTs

Grens, Curtis M. ; Cressler, John D. ; Andrews, Joel M. ; Liang, Qingqinp ; Joseph, Alvin J.

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

2005

409

414

Ge-Si alloys; current density; electric potential; heterojunction bipolar transistors; hot carriers; impedance matching; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; stability; SiGe; bias configuration; breakdown voltage; breakdown-related instabilities; circuit design; common-base configuration; common-emitter configuration; constant base current; constant emitter current; current density; device geometry; hot-carrier degradation; impedance matching; linearity issues; operating current density; operating voltage constraints; quasi-3D compact models; reliability issues; silicon-germanium HBT; technology generation; Breakdown voltage; Circuit synthesis; Current density; Cutoff frequency; Degradation; Electric breakdown; Germanium silicon alloys; Heterojunction bipolar transistors; Reliability engineering; Silicon germanium;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493121

1493121