Title :
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC
Author :
Meneghesso, G. ; Pierobon, R. ; Rampazzo, F. ; Tamiazzo, G. ; Zanoni, E. ; Bernat, J. ; Kordos, P. ; Basile, A.F. ; Chini, A. ; Verzellesi, G.
Author_Institution :
Dept. of Inf. Eng., Padova Univ., Italy
Keywords :
aluminium compounds; electric current; electroluminescence; gallium compounds; high electron mobility transistors; hot carriers; silicon compounds; substrates; GaN-AlGaN-GaN; SiC; SiC substrates; bias conditions; drain current gate-lag dispersion; electroluminescence measurements; gate current decrease; gate-leakage current; gate-to drain surface device regions; high electron mobility transistors; hot carrier effects; hot-electron-stress degradation; off-state stress; on-state stress; unpassivated gallium nitride/aluminium gallium nitride/gallium nitride HEMT; Aluminum gallium nitride; Degradation; Dispersion; Gallium arsenide; Gallium nitride; HEMTs; Leakage current; MODFETs; Silicon carbide; Stress;
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
DOI :
10.1109/RELPHY.2005.1493122
