1651981

Impact of MOSFET gate-oxide reliability on CMOS operational amplifiers in a 130-nm low-voltage CMOS process

Chen, Jung-Sheng ; Ker, Ming-Dou

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

2005

423

430

CMOS analogue integrated circuits; MOSFET; buffer circuits; comparators (circuits); dielectric thin films; low-power electronics; operational amplifiers; semiconductor device models; semiconductor device reliability; 130 nm; MOSFET gate-oxide reliability; close-loop configuration; comparator; equivalent device model; folded-cascode structures; low-voltage CMOS; open-loop configuration; operational amplifiers; overstress; phase margin; small-signal gain; small-signal parameters; stacked configuration; two-stage structures; unity-gain buffer; unity-gain frequency; Analog circuits; CMOS analog integrated circuits; CMOS process; CMOS technology; Digital circuits; Electric breakdown; Frequency measurement; Gain measurement; MOSFET circuits; Operational amplifiers;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493123

1493123