Title :
Analog and RF design issues in high-k & multi-gate CMOS technologies
Author :
Fulde, M. ; Schmitt-Landsiedel, D. ; Knoblinger, G.
Author_Institution :
Infineon Austria AG, Villach, Austria
Abstract :
High-k, metal gate devices and furthermore multi-gate FETs (MuGFETs) are considered as promising solution for scaling down to 32 nm, 22 nm and 16 nm overcoming the limitations of conventional planar bulk. Especially analog, mixed-signal and RF device and circuit performance is affected by these revolutionary changes in technology. This paper discusses different examples for novel, technology related design issues focused on analog, mixed-signal and RF applications.
Keywords :
CMOS integrated circuits; analogue integrated circuits; field effect transistors; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; RF application; analog application; high-k CMOS; metal gate device; mixed-signal application; multigate CMOS technology; multigate FET; size 16 nm; size 22 nm; size 32 nm; CMOS technology; Circuits; Degradation; Error correction; High K dielectric materials; High-K gate dielectrics; Hysteresis; Phase locked loops; Radio frequency; Voltage-controlled oscillators;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424326
