Title :
RF reliability subject to dynamic voltage stress in NMOS circuits
Author :
Yu, Chuanzhao ; Yuan, J.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
Keywords :
MOS analogue integrated circuits; MOSFET; integrated circuit reliability; power amplifiers; radiofrequency integrated circuits; semiconductor device models; semiconductor device reliability; NMOS circuits; NMOS transistor degradation; RF reliability; RFIC; dynamic voltage stress; hot carriers; linearity degradation; noise figure degradation; power amplifier; soft breakdown; Circuits; Cutoff frequency; Degradation; Electric breakdown; MOS devices; Noise figure; Radio frequency; Stress; Testing; Voltage;
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
DOI :
10.1109/RELPHY.2005.1493124
