DocumentCode :
1652021
Title :
Reliability improvement and burn in optimization through the use of die level predictive modeling
Author :
Riordan, Walter Carl ; Miller, Russell ; St Pierre, Eric R.
Author_Institution :
Intel Corp., Chandler, AZ, USA
fYear :
2005
Firstpage :
435
Lastpage :
445
Keywords :
circuit optimisation; integrated circuit reliability; integrated circuit yield; semiconductor device reliability; burn in optimization; die level predictive modeling; generic weighting coefficients; infant mortality; latent defects; lot level methods; optimum nearest neighbor effect; predictive defect model; reliability improvement; scrap criteria; wafer level methods; wafer sort yield data; Accelerated aging; Acceleration; Costs; Materials reliability; Nearest neighbor searches; Predictive models; Production; Reliability engineering; Semiconductor device modeling; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
Type :
conf
DOI :
10.1109/RELPHY.2005.1493125
Filename :
1493125
Link To Document :
بازگشت