1652074

Characterization of thermoelectric devices in ICs as stimulated by a scanning laser beam

Glowacki, Arkadiusz ; Boit, Christian

TUB Berlin Univ. of Technol. Sekr. E2, Germany

2005

450

457

Seebeck effect; failure analysis; integrated circuit interconnections; integrated circuit testing; measurement by laser beam; thermoelectric devices; IC failure analysis; OBIRCH; SEI phenomena; Seebeck effect imaging; TLS; bias voltage conditions; constant current condition; constant voltage condition; contacts; interconnects; microelectronics failure analysis; open circuit localization; optical beam induced resistance change; scanning laser beam stimulation; thermal laser stimulation; thermoelectric device characterization; thermoelectric effects; Laser beams; Laser transitions; Optical beams; Optical imaging; Optical materials; Temperature; Thermal resistance; Thermoelectric devices; Thermoelectricity; Voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493127

1493127