1652245

Pseudo-breakdown phenomenon and barrier integrity in cu/porous ultra low-k damascene interconnects

Chen, Zhe ; Prasad, K. ; Jiang, N. ; Tang, L.J. ; Babu, N. ; Balakuma, S. ; Li, C.Y.

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

2005

478

482

copper; dielectric thin films; diffusion barriers; electric breakdown; integrated circuit interconnections; integrated circuit reliability; porous materials; Cu; IMD; PVD; SiC:H; TaN-Ta; barrier integrity; copper mobility; copper transport behavior; damascene interconnects; diffusion barrier; inter-metal dielectric; interconnect lifetime; physical vapor deposited barrier; porous ultra low-k dielectric; protected sidewall region; pseudo-breakdown phenomenon; sidewall barrier bilayer structure; sidewall barrier penetration; time-dependent dielectric breakdown; Atherosclerosis; Degradation; Dielectric breakdown; Dielectric materials; Electric breakdown; Failure analysis; Integrated circuit interconnections; Plasma chemistry; Plasma materials processing; Rough surfaces;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493132

1493132