• DocumentCode
    1652245
  • Title

    Pseudo-breakdown phenomenon and barrier integrity in cu/porous ultra low-k damascene interconnects

  • Author

    Chen, Zhe ; Prasad, K. ; Jiang, N. ; Tang, L.J. ; Babu, N. ; Balakuma, S. ; Li, C.Y.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • fYear
    2005
  • Firstpage
    478
  • Lastpage
    482
  • Keywords
    copper; dielectric thin films; diffusion barriers; electric breakdown; integrated circuit interconnections; integrated circuit reliability; porous materials; Cu; IMD; PVD; SiC:H; TaN-Ta; barrier integrity; copper mobility; copper transport behavior; damascene interconnects; diffusion barrier; inter-metal dielectric; interconnect lifetime; physical vapor deposited barrier; porous ultra low-k dielectric; protected sidewall region; pseudo-breakdown phenomenon; sidewall barrier bilayer structure; sidewall barrier penetration; time-dependent dielectric breakdown; Atherosclerosis; Degradation; Dielectric breakdown; Dielectric materials; Electric breakdown; Failure analysis; Integrated circuit interconnections; Plasma chemistry; Plasma materials processing; Rough surfaces;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493132
  • Filename
    1493132
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652245