• DocumentCode
    1652316
  • Title

    Impact of buried capping layer on TDDB physics of advanced interconnects

  • Author

    Yiang, K.Y. ; Yoo, W.J. ; Krishnamoorthy, Ahila ; Tang, L.J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
  • fYear
    2005
  • Firstpage
    490
  • Lastpage
    494
  • Keywords
    buried layers; copper; electric breakdown; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; silicon compounds; tantalum; 100 Å; 105 degC; 800 Å; Cu-SiOC; Ta; barrier rupture; buried capping layer thickness effects; capping layer interface; failure mechanisms; interconnect TDDB physics; interconnect electrical reliability; lifetime performance degradation; low-k dielectrics; remnant hardmask; thermomechanical stress; time-dependent dielectric breakdown; Dielectric breakdown; Dielectric materials; Etching; Fabrication; Physics; Plasma applications; Plasma chemistry; Plasma materials processing; Silicon; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493134
  • Filename
    1493134
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652316