1652347

Role of dielectric and barrier integrity in reliability of sub-100 nm copper low-k interconnects

Tökei, Zs ; Van Aelst, J. ; Waldfried, C. ; Escorcia, O. ; Roussel, P. ; Richard, O. ; Travaly, Y. ; Beyer, G.P. ; Maex, K.

IMEC, Leuven, Belgium

2005

495

500

copper; dielectric thin films; diffusion barriers; electric breakdown; integrated circuit interconnections; integrated circuit reliability; 100 nm; BEOL TDDB data; Cu; SiCO:H; TDDB distribution width; accelerated TDDB tests; dielectric integrity; diffusion barrier integrity; low-k interconnect reliability; sidewall damage; time dependent dielectric breakdown; voltage acceleration; Acceleration; Copper; Dielectric breakdown; Dielectric materials; Dielectric substrates; Plasma applications; Plasma chemistry; Plasma temperature; Testing; Voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493135

1493135