Title :
Filament study of STI type drain extended NMOS device using transient interferometric mapping
Author :
Shrivastava, Mayank ; Bychikhin, S. ; Pogany, D. ; Schneider, Jens ; Baghini, M. Shojaei ; Gossner, Harald ; Gornik, Erich ; Rao, V. Ramgopal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol.-Bombay, Mumbai, India
Abstract :
We present filament behavior of STI type DeNMOS devices using detailed Transient Interferometric Mapping experiments and 3D TCAD simulations. Device behavior at different TLP currents is discussed. The impact of localized base-push-out, power dissipation because of space charge build-up, regenerative NPN action and various events during the current filamentation are explored. By uniform turn-on of the device during base push-out the failure current could be improved by more than 2X.
Keywords :
CMOS integrated circuits; space charge; technology CAD (electronics); 3D TCAD simulations; STI type drain extended NMOS device; current filamentation; failure current; localized base-push-out; power dissipation; regenerative NPN action; space charge build-up; transient interferometric mapping; CMOS technology; Current density; Current distribution; Electric breakdown; Fingers; Impact ionization; MOS devices; Nanoelectronics; Solid state circuits; Voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424337
