DocumentCode :
16524
Title :
High-Quality ICPCVD 
for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs
Author :
Bong-Ryeol Park ; Jae-Gil Lee ; Woojin Choi ; Hyungtak Kim ; Kwang-Seok Seo ; Ho-Young Cha
Author_Institution :
Sch. of Electron. & Electr. Eng., Hongik Univ., Seoul, South Korea
Volume :
34
Issue :
3
fYear :
2013
fDate :
Mar-13
Firstpage :
354
Lastpage :
356
Abstract :
We have developed a high-quality SiO2 deposition process using an inductively coupled plasma chemical vapor deposition system for use as a gate oxide of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) for power switching applications. A breakdown field of ~12 MV/cm was achieved using the optimized deposition conditions that were successfully applied in fabrication of the normally off AlGaN/GaN-on-Si MOSHFETs. The fabricated device exhibited excellent characteristics: a maximum drain current density of 375 mA/mm, a threshold voltage of 3 V, and a breakdown voltage of 820 V.
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; current density; elemental semiconductors; gallium compounds; power MOSFET; silicon; silicon compounds; wide band gap semiconductors; AlGaN-Ga-Si; SiO2; aluminium gallium nitride-gallium nitride-on-silicon recessed MOSHFET; breakdown voltage; drain current density; gate oxide; high-quality ICPCVD silicon dioxide; high-quality silicon dioxide deposition process; inductively-coupled plasma chemical vapor deposition system; optimized deposition conditions; power switching applications; threshold voltage; voltage 3 V; voltage 820 V; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MOSHFETs; Plasmas; $hbox{SiO}_{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2236678
Filename :
6415242
Link To Document :
