Title :
A viable and comprehensive TDDB assessment methodology for investigation of SRAM Vmin failure
Author :
Wu, E. ; Braceras, G. ; Turner, D. ; Swift, A. ; Johnson, M. ; Suñé, J. ; Tous, S. ; Li, B. ; Bolam, R. ; Massey, G. ; Khare, M.
Author_Institution :
IBM Syst. & Technol. Group, Essex Junction, VT, USA
Abstract :
Based on fundamental understanding of oxide breakdown (BD) physics established for thin oxides, we demonstrate that product circuit malfunction such as SRAM Vmin failure due to intrinsic TDDB can be accurately predicted. This prediction is based on a viable methodology using power-law voltage acceleration and progressive BD.
Keywords :
SRAM chips; semiconductor device breakdown; SRAM failure; TDDB assessment methodology; oxide breakdown physics; power-law voltage acceleration; thin oxides; Acceleration; Built-in self-test; Circuit simulation; Engines; Performance evaluation; Physics; Random access memory; Stress; Testing; Voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424340
