Title :
Temperature dependent modeling of PD SOI MOSFETs subthreshold conduction
Author :
Osman, Ashraf A. ; Osman, Mohamed A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tennessee State Univ., Nashville, TN, USA
Abstract :
A new temperature dependent subthreshold region model for partially depleted (PD) SOI MOSFET is presented. The model uses the effective gate bias to replace the gate bias in the current expression. This effective gate bias ensures smooth transition between tile strong and weak conduction regions. The model circumvents the discontinuity inherent in the MOS3 subthreshold region model. The model is applied to different geometry (PD) NMOS and PMOS SOI devices over very wide temperature ranges (25-300°C). The model results are closely correlated the measured results at all temperatures
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; 25 to 300 C; MOS3 model; MOSFET subthreshold conduction; Si; effective gate bias; partially depleted SOI MOSFET; subthreshold region model; temperature dependent modeling; Analytical models; Geometry; MOS devices; MOSFETs; Predictive models; Subthreshold current; Temperature dependence; Tires; USA Councils; Voltage;
Conference_Titel :
Devices, Circuits and Systems, 1995., Proceedings of the 1995 First IEEE International Caracas Conference on
Conference_Location :
Caracas
Print_ISBN :
0-7803-2672-5
DOI :
10.1109/ICCDCS.1995.499142
