• DocumentCode
    1652513
  • Title

    A new drain voltage enhanced NBTI degradation mechanism

  • Author

    Jha, Neeraj K. ; Reddy, P. Sahajananda ; Rao, V. Ramgopal

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
  • fYear
    2005
  • Firstpage
    524
  • Lastpage
    528
  • Keywords
    MOSFET; interface states; semiconductor device reliability; thermal stability; H; PMOS transistor reliability; device channel length; drain bias stress; drain voltage enhanced NBTI degradation mechanism; generated hydrogen species diffusion; high temperature stress; negative bias temperature instability; nonuniform interface state generation; pMOSFET; short channel devices; threshold voltage degradation; Charge measurement; Current measurement; Degradation; MOSFET circuits; Niobium compounds; Pulse measurements; Stress measurement; Temperature; Threshold voltage; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493140
  • Filename
    1493140
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652513