DocumentCode
1652514
Title
Thermal shunt approach for microwave power heterojunction bipolar transistors-a review (invited)
Author
Huang, C.I. ; Liou, L.L. ; Barrette, J.P.
Author_Institution
Wright Lab., Wright-Patterson AFB, OH, USA
fYear
1995
Firstpage
201
Lastpage
207
Abstract
The newly developed thermal-shunt approach for AlGaAs/GaAs microwave power heterojunction bipolar transistors is reviewed from its inception through thermal modeling to fabrication and performance evaluation. Its merits of providing low noise figure and generating high power density at microwave frequency are summarized
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; semiconductor device noise; AlGaAs-GaAs; AlGaAs/GaAs; microwave frequency; microwave power heterojunction bipolar transistors; noise figure; performance evaluation; power density; thermal modeling; thermal shunt approach; Electromagnetic heating; Fabrication; Fingers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High power microwave generation; Microwave transistors; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems, 1995., Proceedings of the 1995 First IEEE International Caracas Conference on
Conference_Location
Caracas
Print_ISBN
0-7803-2672-5
Type
conf
DOI
10.1109/ICCDCS.1995.499144
Filename
499144
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