Title :
Thermal shunt approach for microwave power heterojunction bipolar transistors-a review (invited)
Author :
Huang, C.I. ; Liou, L.L. ; Barrette, J.P.
Author_Institution :
Wright Lab., Wright-Patterson AFB, OH, USA
Abstract :
The newly developed thermal-shunt approach for AlGaAs/GaAs microwave power heterojunction bipolar transistors is reviewed from its inception through thermal modeling to fabrication and performance evaluation. Its merits of providing low noise figure and generating high power density at microwave frequency are summarized
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; semiconductor device noise; AlGaAs-GaAs; AlGaAs/GaAs; microwave frequency; microwave power heterojunction bipolar transistors; noise figure; performance evaluation; power density; thermal modeling; thermal shunt approach; Electromagnetic heating; Fabrication; Fingers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High power microwave generation; Microwave transistors; Silicon; Temperature;
Conference_Titel :
Devices, Circuits and Systems, 1995., Proceedings of the 1995 First IEEE International Caracas Conference on
Conference_Location :
Caracas
Print_ISBN :
0-7803-2672-5
DOI :
10.1109/ICCDCS.1995.499144
