1652533

Random charge effects for PMOS NBTI in ultra-small gate area devices

Agostinelli, M. ; Pae, S. ; Yang, W. ; Prasad, C. ; Kencke, D. ; Ramey, S. ; Snyder, E. ; Kashyap, S. ; Jones, M.

Intel Corp., Hillsboro, OR, USA

2005

529

532

MOSFET; fluctuations; percolation; semiconductor device models; semiconductor device reliability; thermal stability; PMOS NBTI; PMOS transistor degradation modeling; cache cell minimum operating voltage; channel percolation path; device degradation random fluctuations; discrete random trapped charge effect; low inversion charge density areas; negative bias temperature instability; random charge effects; threshold voltage; transistor reliability mechanism; ultra-small gate area devices; Current density; Degradation; Fluctuations; Impurities; Niobium compounds; Poisson equations; Semiconductor process modeling; Stress; Threshold voltage; Titanium compounds;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493141

1493141