• DocumentCode
    1652533
  • Title

    Random charge effects for PMOS NBTI in ultra-small gate area devices

  • Author

    Agostinelli, M. ; Pae, S. ; Yang, W. ; Prasad, C. ; Kencke, D. ; Ramey, S. ; Snyder, E. ; Kashyap, S. ; Jones, M.

  • Author_Institution
    Intel Corp., Hillsboro, OR, USA
  • fYear
    2005
  • Firstpage
    529
  • Lastpage
    532
  • Keywords
    MOSFET; fluctuations; percolation; semiconductor device models; semiconductor device reliability; thermal stability; PMOS NBTI; PMOS transistor degradation modeling; cache cell minimum operating voltage; channel percolation path; device degradation random fluctuations; discrete random trapped charge effect; low inversion charge density areas; negative bias temperature instability; random charge effects; threshold voltage; transistor reliability mechanism; ultra-small gate area devices; Current density; Degradation; Fluctuations; Impurities; Niobium compounds; Poisson equations; Semiconductor process modeling; Stress; Threshold voltage; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493141
  • Filename
    1493141
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652533