• DocumentCode
    1652561
  • Title

    The contribution of HFO2 bulk oxide traps to dynamic NBTI in pMOSFETs

  • Author

    Zhu, B. ; Suehle, J.S. ; Voge, E. ; Bernstein, J.B.

  • Author_Institution
    Dept. of Mech. Eng., Maryland Univ., College Park, MD, USA
  • fYear
    2005
  • Firstpage
    533
  • Lastpage
    537
  • Keywords
    MOSFET; dielectric thin films; frequency response; hafnium compounds; interface states; semiconductor device reliability; thermal stability; CMOS reliability; CMOS scaling; HfO2; SiO2; bulk oxide traps; device lifetime extrapolation; dynamic NBTI; high-k gate dielectrics; interface traps; negative bias temperature instability; pMOSFET gate dielectrics; pulsed bias stress conditions; pulsed stress frequency response; threshold voltage shift; voltage acceleration parameters; Degradation; Dielectric substrates; Hafnium oxide; MOSFETs; Negative bias temperature instability; Niobium compounds; Stress; Testing; Threshold voltage; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493142
  • Filename
    1493142
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652561