Analysis of abrupt and linearly-graded HBTs with or without a setback layer

Author

Yuan, J.S. ; Ning, J.H.

Author_Institution

Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA

fYear

1995

Firstpage

212

Lastpage

216

Abstract

Analytical current equations for abrupt and linearly-graded heterojunctions with or without a setback layer have been derived. The equations are general and applicable to both abrupt and linearly-graded heterojunction bipolar transistors. Collector and base currents and small-signal parameters such as transconductance and cutoff frequency of the abrupt and linearly-graded heterojunction bipolar transistors with or without a setback layer are evaluated. Comparisons between the isothermal model, the numerical model, and the present model including self-heating effect are demonstrated

Keywords

heterojunction bipolar transistors; semiconductor device models; semiconductor heterojunctions; HBTs; abrupt heterojunctions; analytical current equations; base currents; collector currents; cutoff frequency; isothermal model; linearly-graded heterojunctions; numerical model; self-heating effect; setback layer; small-signal parameters; transconductance; Cutoff frequency; Equations; Gallium arsenide; Heterojunction bipolar transistors; Isothermal processes; Semiconductor process modeling; Spontaneous emission; Thermal conductivity; Thermal resistance; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 1995., Proceedings of the 1995 First IEEE International Caracas Conference on

Conference_Location

Caracas

Print_ISBN

0-7803-2672-5

Type

conf

DOI

10.1109/ICCDCS.1995.499146

Filename

499146