Title :
A 1-V operated polymer vertical transistor with high on/off current ratio
Author :
Chao, Yu-Chiang ; Tsai, Wu-Wei ; Chen, Chun-Yu ; Zan, Hsiao-Wen ; Meng, Hsin-Fei ; Jiang, Shu-Ling ; Chiang, Chun-Ming ; Ku, Ming-Che
Author_Institution :
Inst. of Phys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A 1-V solution-processed polymer vertical transistor with on/off current ratio higher than 2 × 104 is firstly demonstrated. The channel length is 200 nm. A new structure is used to perform reliable leakage control. Significant impacts of thin film morphology and metal doping effect on the leakage current of organic vertical transistors are firstly observed and recognized as two new leakage phenomena. The complete leakage control and the reliable process in this report enable polymer vertical transistors for real applications.
Keywords :
conducting polymers; organic semiconductors; thin film transistors; high on/off current ratio; leakage current; metal doping effect; organic vertical transistors; reliable leakage control; size 200 nm; solution-processed polymer vertical transistor; thin film morphology; voltage 1 V; Coatings; Insulation; Leakage current; Metal-insulator structures; Polymers; Scanning electron microscopy; Semiconductor diodes; Substrates; Surface treatment; Voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424347
