1652602

Reliability investigation upon 30nm gate length ultra-high aspect ratio FinFETs

Liao, Wen-Shiang ; Chen, Shiao-Shien ; Chiang, Sinclair ; Shiau, Wei-Tsun

Central R&D Div., United Microelectron. Corp., Hsinchu, Taiwan

2005

541

544

MOSFET; hot carriers; semiconductor device reliability; thermal stability; 14 Å; 30 nm; 3D vertical double gate FinFET; AC lifetimes; DC lifetimes; FinFET reliability; HCI; NMOS; PMOS NBTI lifetimes; hot carrier injection; negative bias temperature instability; nitrided oxide gate; ultra-high aspect ratio FinFET; FinFETs; Human computer interaction; Logic devices; MOS devices; Microelectronics; Plasma devices; Plasma displays; Plasma immersion ion implantation; Silicon; Solid modeling;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493144

1493144