• DocumentCode
    1652602
  • Title

    Reliability investigation upon 30nm gate length ultra-high aspect ratio FinFETs

  • Author

    Liao, Wen-Shiang ; Chen, Shiao-Shien ; Chiang, Sinclair ; Shiau, Wei-Tsun

  • Author_Institution
    Central R&D Div., United Microelectron. Corp., Hsinchu, Taiwan
  • fYear
    2005
  • Firstpage
    541
  • Lastpage
    544
  • Keywords
    MOSFET; hot carriers; semiconductor device reliability; thermal stability; 14 Å; 30 nm; 3D vertical double gate FinFET; AC lifetimes; DC lifetimes; FinFET reliability; HCI; NMOS; PMOS NBTI lifetimes; hot carrier injection; negative bias temperature instability; nitrided oxide gate; ultra-high aspect ratio FinFET; FinFETs; Human computer interaction; Logic devices; MOS devices; Microelectronics; Plasma devices; Plasma displays; Plasma immersion ion implantation; Silicon; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493144
  • Filename
    1493144
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652602