1652623

Short and long-term safe operating area considerations in LDMOS transistors

Hower, Philip L. ; Pendharkar, Sameer

Mixed-Signal Technol. Dev., Texas Instruments, Manchester, UK

2005

545

550

hot carriers; impact ionisation; power MOSFET; thermal stability; LDMOS transistors; electrical SOA; electrical stress; high-voltage MOS transistors; hot carrier SOA; hot carrier injection; impact ionization; lateral DMOS transistors; long-term safe operating area; power-handling transistors; short-term safe operating area; thermal SOA; thermal instability; thermal runaway; Breakdown voltage; CMOS technology; Hot carriers; Impact ionization; Instruments; MOS devices; MOSFETs; Semiconductor optical amplifiers; Testing; Thermal stresses;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493145

1493145