DocumentCode
1652641
Title
Hot carrier degradation of lateral DMOS transistor capacitance and reliability issues
Author
Hefyene, Nasser ; Anghel, Costin ; Gillon, Renaud ; Ionescu, Adrian Mihai
Author_Institution
Swiss Fed. Inst. of Technol., Lausanne, Switzerland
fYear
2005
Firstpage
551
Lastpage
554
Keywords
capacitance; hot carriers; power MOSFET; semiconductor device reliability; DC characteristics degradation; DC parameters shift; DMOS AC characteristics; drift region degradation; gate oxide degradation; high voltage DMOS transistors; hot carrier capacitance degradation; lateral DMOS transistors; maximum body current stress; maximum gate voltage stress; near breakdown stress; transistor reliability; Breakdown voltage; CMOS technology; Capacitance measurement; Degradation; Hot carriers; Scattering parameters; Semiconductor device reliability; Stress; Switches; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493146
Filename
1493146
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