DocumentCode :
1652676
Title :
Electron trapping and interface trap generation in drain extended pMOS transistors
Author :
Moens, P. ; Bauwens, F. ; Nelson, M. ; Tack, M.
Author_Institution :
AMI Semicond. Belgium BVBA, Oudenaarde, Belgium
fYear :
2005
Firstpage :
555
Lastpage :
559
Keywords :
MOSFET; charge injection; electron traps; hot carriers; interface states; DeMOS; charge pumping; drain extended PMOS transistors; electron injection; electron trapping; hot carrier stress; interface trap generation; medium voltage transistors; p-type lateral drain extended MOS; spacer oxide interface trap formation; specific on-resistance degradation; Automotive engineering; Batteries; Charge pumps; Degradation; Electron traps; Hot carriers; MOSFETs; Stress; Transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
Type :
conf
DOI :
10.1109/RELPHY.2005.1493147
Filename :
1493147
Link To Document :
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