DocumentCode
1652683
Title
Temperature-stable 25-Gbps direct-modulation in 1.3-μm InAs/GaAs quantum dot lasers
Author
Ishida, Mitsuru ; Matsuda, Manabu ; Tanaka, Yu ; Takada, Kan ; Ekawa, Mitsuru ; Yamamoto, Tsuyoshi ; Kageyama, Takeo ; Yamaguchi, Masaomi ; Nishi, Kenichi ; Sugawara, Mitsuru ; Arakawa, Yasuhiko
Author_Institution
Inst. of Nano Quantum Inf. Electron., Univ. of Tokyo, Tokyo, Japan
fYear
2012
Firstpage
1
Lastpage
2
Abstract
By clarifying the temperature and mirror-loss dependence of modulation bandwidth of 1.3-μm-wavelength InAs/GaAs quantum-dot lasers, temperature-stable 25-Gbps direct-modulation is achieved from 20 to 70°C with fixed bias and modulation currents.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; mirrors; quantum dot lasers; semiconductor quantum dots; InAs-GaAs; bit rate 25 Gbit/s; direct-modulation; mirror-loss dependence; quantum dot lasers; temperature 20 C to 70 C; wavelength 1.3 mum; Bandwidth; Gallium arsenide; Mirrors; Modulation; Quantum dot lasers; Temperature dependence; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6325623
Link To Document