Title :
Negative-resistance characteristics of organic-dye-doped thin-polymer-film device
Author :
Kawamoto, Akira ; Suzuoki, Yasuo ; Mizutani, Teruyoshi
Author_Institution :
Fukui Nat. Coll. of Technol., Sabae, Japan
Abstract :
In order to develop a new negative resistance device, a single-layer device of organic-dye-doped insulating polymer has been fabricated by dipping. The current-voltage characteristics at room temperature showed remarkable negative resistance, which did not depend greatly on the combination of insulating polymers and dopants. In addition, the ratio of peak current to valley current was 23 or higher and the difference 2 V. The origin of the negative resistance is discussed in terms of tunneling transport of holes or electrons through the bulk of the dye-doped polymer
Keywords :
conducting polymers; hole mobility; negative resistance devices; polymer films; tunnelling; 8-hydroxyquinoline aluminum; N,N´-diphenyl-N,N´-bis(3-methylphenyl)-[1,1´-biphenyl]-4,4´-diamin e; current-voltage characteristics; dipping; hole injection; negative resistance device; organic-dye-doped thin-polymer-film device; peak current to valley current ratio; polystyrene; polyvinylcarbazole; tunneling transport; Charge carrier processes; Current-voltage characteristics; Diodes; Educational institutions; Electrodes; Plastic insulation; Polymers; Temperature; Tunneling; Voltage;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.617654
