Title :
99-μm-long-cavity laser diode using highly stacked InGaAs quantum dots
Author :
Tanoue, F. ; Sugawara, H. ; Akahane, K. ; Yamamoto, N.
Author_Institution :
Grad. Sch. of Syst. Design, Tokyo Metropolitan Univ., Hino, Japan
Abstract :
We fabricated a 99-μm-long-cavity broad-area laser diode involving 19 stacked InGaAs quantum dots, which lased at 1013 nm without any HR coating, and the threshold current density was 2.25 kA/cm2.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical fabrication; semiconductor lasers; semiconductor quantum dots; HR coating; InGaAs; laser diode; quantum dots; size 99 mum; wavelength 1013 nm; Cavity resonators; Diode lasers; Indium gallium arsenide; Laser mode locking; Quantum dot lasers; Threshold current;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
