1652770

Reliability assessment of deep trench isolation structures

Moens, P. ; Coppens, P. ; Baele, J. ; Bauwens, F. ; Boonen, S. ; De Vleeschouwer, H. ; De Pestel, F. ; Tack, M.

AMI Semicond. Belgium BVBA, Oudenaarde, Belgium

2005

573

577

integrated circuit reliability; interface states; isolation technology; power integrated circuits; semiconductor device reliability; deep trench isolation structures; interface states; reliability; reverse bias stress; smart power; variable base level charge pumping technique; Ambient intelligence; Charge pumps; Degradation; Driver circuits; Implants; Isolation technology; Silicon; Stress; Temperature; Voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493150

1493150