Title :
InGaAs MOSFET performance and reliability improvement by simultaneous reduction of oxide and interface charge in ALD (La)AlOx/ZrO2 gate stack
Author :
Huang, J. ; Goel, N. ; Zhao, H. ; Kang, C.Y. ; Min, K.S. ; Bersuker, G. ; Oktyabrsky, S. ; Gaspe, C.K. ; Santos, M.B. ; Majhi, P. ; Kirsch, P.D. ; Tseng, H.-H. ; Lee, J.C. ; Jammy, R.
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
The performance and reliability of ZrO2/In0.53Ga0.47As MOSFETs are shown to be improved by simultaneous reduction of dielectric and interface charges. An amorphous (La)AlOx interlayer at the ZrO2/In0.53Ga0.47As interface is a key to reduce border traps, interface traps and move ZrO2 fixed charge away from the In0.53Ga0.47As. Border traps are reduced ~3x, effective fixed charges are reduced ~3x and interface trap density is reduced ~1.5x. The net effect of the improved stack is 50% normalized Id improvement and 75% normalized Gm improvement. P/NBTI cyclic stress results indicate Al2O3/ZrO2 is more reliable than ZrO2 only. ¿Vth of the bilayer show excellent repeatability; conversely, ¿Vth of ZrO2 shows permanent (not recoverable) interface degradation during relaxation (NBTI stress). La incorporation in Al2O3 increases the ¿-value while providing improved reliability over both the ZrO2 and Al2O3/ZrO2 stack.
Keywords :
III-V semiconductors; MOSFET; amorphous semiconductors; indium compounds; interface states; lanthanum compounds; reliability; zirconium compounds; (La)AlO-ZrO2; ALD gate stack; Al2O3-ZrO2; InGaAs MOSFET; NBTI stress; ZrO2-In0.53Ga0.47As; amorphous interlayer; border traps; cyclic stress; dielectric charges; interface charges; interface trap density; interface traps; permanent interface degradation; reliability improvement; Aluminum oxide; Amorphous materials; CMOS technology; Dielectrics; Indium gallium arsenide; MOSFET circuits; Niobium compounds; Scattering; Stress; Titanium compounds;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424357
