1652841

Analysis of electric field distribution and its influence on dielectric failures in asymmetric copper interconnect structures

Lin, Tom M Z ; Hsu, W.M. ; Lee, S.Y. ; Chiu, C.C. ; Wu, Kenneth

Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan

2005

582

583

electric fields; failure analysis; finite element analysis; integrated circuit interconnections; integrated circuit reliability; leakage currents; semiconductor device breakdown; semiconductor device reliability; Cu; FEM; asymmetric copper interconnect structures; asymmetric via-involved structures; backend time-dependent dielectric breakdown test; continuous scaling technology; dielectric failures; electric field concentration points; electric field distribution analysis; failure-mode analysis; finite element method; leakage current; line-to-line symmetric structures; porous low-k films; reliability problems; Circuit testing; Copper; Dielectric breakdown; Failure analysis; Finite element methods; Integrated circuit interconnections; Leakage current; Materials reliability; Performance analysis; Performance evaluation;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493153

1493153