1652865

Stability of capacitance voltage linearity for high-k MIM capacitor

Besset, C. ; Bruyere, S. ; Monsieur, F. ; Boret, S. ; Deloffre, E. ; Vincent, E.

Central R&D labs, STMicroelectronics, Crolles, France

2005

586

587

BiCMOS analogue integrated circuits; CMOS analogue integrated circuits; MIM devices; capacitance; dielectric materials; stability; Al₂O₃; BiCMOS technologies; CMOS technologies; Ta₂O₅; alumina; analog IC MIM applications; capacitance linearity variations; capacitance-voltage linearity stability; high temperature capacitance hysteresis; high-k MIM capacitor; high-k dielectric materials; silica; silicon nitride; tantalum oxide; CMOS technology; Capacitance; Capacitance-voltage characteristics; Frequency; High K dielectric materials; High-K gate dielectrics; Linearity; MIM capacitors; Stability; Temperature;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493155

1493155