Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution

Author

Lin, D. ; Brammertz, G. ; Sioncke, S. ; Fleischmann, C. ; Delabie, A. ; Martens, K. ; Bender, H. ; Conard, T. ; Tseng, W.H. ; Lin, J.C. ; Wang, W.E. ; Temst, K. ; Vatomme, A. ; Mitard, J. ; Caymax, M. ; Meuris, M. ; Heyns, M. ; Hoffmann, T.

Author_Institution

Interuniversity Microelectron. Center (IMEC vzw), Leuven, Belgium

fYear

2009

Firstpage

1

Lastpage

4

Abstract

To address the integration of the high-mobility Ge/III-V MOSFET, a common gate stack (CGS) solution is proposed for the first time and demonstrated on Ge and InGaAs channels with combined hole and electron field-effect mobility values up to 400 cm²/eV-s and 1300 cm²/eV-s. Based on the duality found on the InGaAs/Ge MOS system, this approach aims to integrate the InGaAs/Ge MOSFET processes for high performance CMOS applications with an emphasis on progressive EOT scaling.

Keywords

CMOS integrated circuits; III-V semiconductors; MOSFET; electron mobility; gallium arsenide; germanium; hole mobility; indium compounds; InGaAs-Ge; InGaAs-Ge CMOS; MOSFET; electron field-effect mobility; gate stack solution; hole mobility; Aluminum oxide; CMOS process; Capacitance-voltage characteristics; Dielectric substrates; Frequency; Indium gallium arsenide; MOS capacitors; MOSFETs; Performance evaluation; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424359

Filename

5424359