Title :
A comprehensive solution for ultra-thin oxide reliability issue including a novel explanation of power-law exponent variations
Author :
Kang, Ting-Kuo ; Shieh, Jerry ; Lo, Oswin ; Chen, Ju-Ping ; Lin, Cheng-Li ; Su, K.C.
Author_Institution :
Q&RA/RE/Oxide United Microelectron. Corp., Hsin-Chu, Taiwan
Keywords :
MOSFET; dielectric thin films; nitridation; nitrogen; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; 65 nm; CMOS technologies; MOSFET; N; dielectric potential barrier; gate oxide nitrogen concentration; gate oxide voltage acceleration; high voltage operation; nFET; nitridation; oxide breakdown; pFET; power law exponent; power-law exponent variations; ultra-thin oxide reliability; voltage acceleration power law modeling; Anodes; CMOS technology; Degradation; Dielectrics; Electric breakdown; Nitrogen; Plasma devices; Protons; Semiconductor device modeling; Voltage;
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
DOI :
10.1109/RELPHY.2005.1493160
