Title :
Experimental assessment of self-heating in SOI FinFETs
Author :
Scholten, A.J. ; Smit, G.D.J. ; Pijper, R.M.T. ; Tiemeijer, L.F. ; Tuinhout, H.P. ; van der Steen, J.-L.P.J. ; Mercha, A. ; Braccioli, M. ; Klaassen, D.B.M.
Author_Institution :
NXP-TSMC Res. Centre, Eindhoven, Netherlands
Abstract :
In this paper, it is shown that self-heating causes a gigantic effect on the capacitances of MOSFETs/FinFETs. The effect is used to determine the SOI FinFET thermal impedance and to determine the temperature rise during FinFET operation.
Keywords :
MOSFET; silicon-on-insulator; thermal conductivity measurement; SOI FinFET; self-heating; temperature rise; thermal impedance; Capacitance; FinFETs; Frequency; Impedance; MOSFETs; Pulse measurements; Space vector pulse width modulation; Temperature; Thermal conductivity; Time measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424362
