Title :
SPICE model development for SiC power MOSFET
Author :
Pratap, Rudra ; Singh, R.K. ; Agarwal, Vivek
Author_Institution :
Dept. of Electr. Eng., Motilal Nehru Nat. Inst. of Technol., Allahabad, India
Abstract :
SiC Power MOSFETs show a tremendous potential for high voltage, high temperature, high-power and high-frequency power electronic applications. A simplified SPICE model is proposed for the SiC Power MOSFET, CMF20120D, based on the understanding of the power MOSFET discrete devices terminal behavior. The aim of the model development is to reuse the available built-in MOSFET models of the regular lateral MOS devices in the commercial SPICE simulators and propose a new model to depict the same behavior as expected by SiC device. The advantage of such model is the limited number of required parameters, which can readily be extracted from simple external terminal measurements or from standard datasheets. The results of simulation and comparison with real device measurement show appreciable closeness with the datasheet.
Keywords :
SPICE; power MOSFET; power electronics; silicon compounds; CMF20120D; SPICE model development; SiC; external terminal measurements; high temperature applications; high-frequency power electronic applications; high-power applications; power MOSFET discrete devices terminal behavior; real device measurement; regular lateral MOS devices; standard datasheets; Integrated circuit modeling; MOSFET; Mathematical model; SPICE; Semiconductor device modeling; Silicon carbide; Temperature; MOSFET; SPICE model; SiC;
Conference_Titel :
Power Electronics, Drives and Energy Systems (PEDES), 2012 IEEE International Conference on
Conference_Location :
Bengaluru
Print_ISBN :
978-1-4673-4506-4
DOI :
10.1109/PEDES.2012.6484369