High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

Author

Bangsaruntip, S. ; Cohen, G.M. ; Majumdar, A. ; Zhang, Y. ; Engelmann, S.U. ; Fuller, N.C.M. ; Gignac, L.M. ; Mittal, S. ; Newbury, J.S. ; Guillorn, M. ; Barwicz, T. ; Sekaric, L. ; Frank, M.M. ; Sleight, J.W.

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2009

Firstpage

1

Lastpage

4

Abstract

We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET I_DSAT = 825/950 Â¿A/Â¿m (circumference-normalized) or 2592/2985 Â¿A/Â¿m (diameter-normalized) at supply voltage V_DD = 1 V and off-current I_OFF = 15 nA/Â¿m. Superior NW uniformity is obtained through the use of a combined hydrogen annealing and oxidation process. Clear scaling of short-channel effects versus NW size is observed.

Keywords

MOSFET; annealing; elemental semiconductors; hafnium compounds; oxidation; semiconductor quantum wires; silicon; tantalum compounds; NFET; PFET; Si; TaN-HfJk; drive-current performance; electrostatic scaling; gate stack; hydrogen annealing; oxidation; short-channel effects; undoped-body gate-all-around nanowire MOSFET; voltage 1 V; wire size dependent scaling; MOSFETs; Silicon; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424364

Filename

5424364