Title :
High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling
Author :
Bangsaruntip, S. ; Cohen, G.M. ; Majumdar, A. ; Zhang, Y. ; Engelmann, S.U. ; Fuller, N.C.M. ; Gignac, L.M. ; Mittal, S. ; Newbury, J.S. ; Guillorn, M. ; Barwicz, T. ; Sekaric, L. ; Frank, M.M. ; Sleight, J.W.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET IDSAT = 825/950 ¿A/¿m (circumference-normalized) or 2592/2985 ¿A/¿m (diameter-normalized) at supply voltage VDD = 1 V and off-current IOFF = 15 nA/¿m. Superior NW uniformity is obtained through the use of a combined hydrogen annealing and oxidation process. Clear scaling of short-channel effects versus NW size is observed.
Keywords :
MOSFET; annealing; elemental semiconductors; hafnium compounds; oxidation; semiconductor quantum wires; silicon; tantalum compounds; NFET; PFET; Si; TaN-HfJk; drive-current performance; electrostatic scaling; gate stack; hydrogen annealing; oxidation; short-channel effects; undoped-body gate-all-around nanowire MOSFET; voltage 1 V; wire size dependent scaling; MOSFETs; Silicon; Wire;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424364
