Title :
A model for reverse short-channel effects in MOSFETs
Author :
Narayanan, R. ; Ortiz-Conde, A. ; Liou, J.J. ; Golovanova, L. ; Wong, W. ; Garcia Sánchez, F.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
A model for reverse short-channel effects of the threshold voltage is presented by adding two separate n-regions around the source and drain regions of a p-channel MOSFET. Two-dimensional simulations with MEDICI of this modified p-channel MOSFET verifies this model. Experimental evidence of the reverse short-channel effects is also found. The errors inherent to the method for extracting the threshold voltage are shown not to be responsible for the reverse short-channel effects
Keywords :
MOSFET; semiconductor device models; MEDICI; model; p-channel MOSFET; reverse short-channel effects; threshold voltage; two-dimensional simulations; Chaos; Large Hadron Collider; MOSFETs; Medical simulation; Numerical simulation; SPICE; Silicides; Testing; Threshold voltage; Virtual colonoscopy;
Conference_Titel :
Devices, Circuits and Systems, 1995., Proceedings of the 1995 First IEEE International Caracas Conference on
Conference_Location :
Caracas
Print_ISBN :
0-7803-2672-5
DOI :
10.1109/ICCDCS.1995.499163
