Title :
Novel DRAM cell with amplified capacitor for embedded application
Author :
Cho, Hyun-Jin ; Lin, Ming-Ren
Author_Institution :
Strategic Technol. Group, GLOBALFOUNDRIES, Inc., Sunnyvale, CA, USA
Abstract :
Novel DRAM cell with logic process compatible and whose memory operation is the same as the conventional DRAM operation is first time introduced. The cell uses the MOS capacitor with open base NPN bipolar transistor to amplify the storage capacitor. We fabricated the prototype cell and demonstrated the memory cell operation.
Keywords :
DRAM chips; MOS capacitors; embedded systems; DRAM cell; MOS capacitor; amplified capacitor; embedded application; memory cell operation; open base NPN bipolar transistor; storage capacitor; Bipolar transistors; Capacitance; Implants; Leakage current; Logic; MOS capacitors; Power supplies; Prototypes; Random access memory; Switches;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424372
