Title :
High Operating Temperature Midwave Infrared InAs/GaSb Superlattice Photodetectors on (111) GaSb Substrates
Author :
Plis, Elena ; Klein, Bernhard ; Myers, S. ; Gautam, Nishit ; Smith, E.P. ; Krishna, Sanjay
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM, USA
Abstract :
We report on the detailed radiometric characterization of midwave infrared (MWIR) (100% cutoff wavelength, i.e., λ100%, was 5.6 μm at 295 K) InAs/GaSb type-II strained layer superlattice (T2SL) detectors grown on the GaSb (111) substrate. At 295 K and 4 μm, a dark current density Jd of 0.53 A/cm2 (at -50 mV) and specific detectivity D* = 8.5 × 109 Jones (at 0 V) were demonstrated, which are superior values to the state-of-the-art MWIR T2SL detectors with the same (p-i-n) design grown on conventional GaSb (100) substrates.
Keywords :
III-V semiconductors; current density; gallium compounds; indium compounds; infrared detectors; photodetectors; semiconductor superlattices; GaSb; InAs-GaSb; MWIR; T2SL; dark current density; high operating temperature midwave infrared superlattice photodetector; p-i-n design; radiometric characterization; size 4 mum; size 5.6 mum; temperature 295 K; type-II strained layer superlattice detector; voltage -50 mV; Dark current; Detectors; Molecular beam epitaxial growth; Performance evaluation; Substrates; Superlattices; Temperature measurement; (111)GaSb substrate; InAs/GaSb strained layer superlattice; midinfrared detection;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2236534
